The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Feb. 21, 2013
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Ae-Jeong Lee, Chungbuk, KR;
Bongyong Lee, Gyeonggi-do, KR;
Dongchan Kim, Seoul, KR;
Jaesung Sim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method of adjusting a threshold voltage of a ground selection transistor in a nonvolatile memory device includes providing a first voltage to a gate of a first ground selection transistor in a read operation and providing a second voltage to a gate of a second ground selection transistor in the read operation. The nonvolatile memory device includes at least one string, the string having string selection transistors, memory cells and the first and second ground selection transistors connected in series and stacked on a substrate.