The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Sep. 15, 2012
Applicants:

Hidetoshi Nakanishi, Kyoto, JP;

Masayoshi Tonouchi, Suita, JP;

Inventors:

Hidetoshi Nakanishi, Kyoto, JP;

Masayoshi Tonouchi, Suita, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G01N 21/95 (2006.01); G01N 21/17 (2006.01); G01R 31/311 (2006.01); G01N 21/956 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01N 21/1717 (2013.01); G01R 31/311 (2013.01); G01N 21/956 (2013.01);
Abstract

A semiconductor inspection apparatus () is an apparatus for inspecting a semiconductor device. The semiconductor inspection apparatus () includes a pulsed laser light source () for emitting pulsed laser light () toward a substrate () with a semiconductor device formed thereon, an electromagnetic wave pulse application part () for applying a reverses-biasing electromagnetic wave pulse () for applying a reverse bias to an application position () which receives the pulsed laser light (), and a detection part () for detecting an electromagnetic wave pulse () emitted from the application position () in response to the application of the pulsed laser light ().


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