The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Nov. 09, 2012
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventor:

Chun-Chi Chen, New Taipei, TW;

Assignee:

Mediatek Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H02H 9/04 (2006.01); H03K 17/081 (2006.01);
U.S. Cl.
CPC ...
H03K 3/00 (2013.01); H02H 9/04 (2013.01); H03K 17/08104 (2013.01);
Abstract

A driving circuit is provided. The driving circuit is capable of driving a load coupled to an output node of the driving circuit. The driving circuit includes an output-stage element, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a first P-type metal-oxide-semiconductor (PMOS) transistor. The output-stage element is coupled between an operation voltage source and the output node. The first NMOS transistor has a gate, a drain coupled to the output node, and a source coupled to a ground. The first PMOS transistor has a gate, a drain coupled to the ground, and a source coupled to the output node. When the first NMOS transistor begins to be turned off, the first PMOS transistor is turned on, and a voltage at the drain of the first NMOS transistor is clamped to be lower than a breakdown trigger voltage of the first NMOS transistor.


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