The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Aug. 01, 2012
Applicants:
Hariklia Deligianni, Tenafly, NJ (US);
Xiaoyan Shao, Yorktown Heights, NY (US);
Inventors:
Hariklia Deligianni, Tenafly, NJ (US);
Xiaoyan Shao, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/532 (2006.01); C25D 3/50 (2006.01); C25D 5/50 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53242 (2013.01); C25D 3/50 (2013.01); C25D 5/50 (2013.01); H01L 21/2885 (2013.01); H01L 21/76877 (2013.01); H01L 2924/3011 (2013.01);
Abstract
A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure.