The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Jul. 29, 2011
Eugene Hwang, Melrose, MA (US);
Sunil Ashok Bhave, Ithaca, NY (US);
Eugene Hwang, Melrose, MA (US);
Sunil Ashok Bhave, Ithaca, NY (US);
Cornell University, Ithaca, NY (US);
Abstract
A radio frequency microelectromechanical (RF MEMS) device can comprise an actuation p-n junction and a sensing p-n junction formed within a semiconductor substrate. The RF MEMS device can be configured to operate in a mode in which an excitation voltage is applied across the actuation p-n junction varying a non-mobile charge within the actuation p-n junction to modulate an electric field acting upon dopant ions and creating electrostatic forces. The electrostatic forces can create a mechanical motion within the actuation p-n junction. The mechanical motion can modulate a depletion capacitance of the sensing p-n junction, thereby creating a motional current. At least one of the p-n junctions can be located at an optimal location to maximize the efficiency of the RF MEMS device at high resonant frequencies.