The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Dec. 16, 2011
Takashi Ando, Tuckahoe, NY (US);
Changhwan Choi, Seoul, KR;
Kisik Choi, Hopewell Junction, NY (US);
Vijay Narayanan, New York, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Changhwan Choi, Seoul, KR;
Kisik Choi, Hopewell Junction, NY (US);
Vijay Narayanan, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Global Foundries, Inc., Grand Cayman, KY;
Abstract
A semiconductor device including an NMOS region and a PMOS region; the NMOS region having a gate structure including a first high-k gate dielectric, a first work function setting metal and a gate electrode fill material; the PMOS region having a gate structure comprising a second high-k gate dielectric, a second work function setting metal and a gate electrode fill material; wherein the first gate dielectric is different than the second gate dielectric and the first work function setting metal is different than the second work function setting metal. Also disclosed are methods for fabricating the semiconductor device which include a gate last process.