logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8941155 B1

PDFFull Text
Date of Patent:
Jan. 27, 2015

Filed:

Sep. 14, 2012

Fin field effect transistors including multiple lattice constants and methods of fabricating the same

Applicants:

Myung Gil Kang, Seoul, KR;

Changwoo OH, Suwon-si, KR;

Heedon Jeong, Hwaseong-si, KR;

Chiwon Cho, Hwaseong-si, KR;

Inventors:

Myung Gil Kang, Seoul, KR;

Changwoo Oh, Suwon-si, KR;

Heedon Jeong, Hwaseong-si, KR;

Chiwon Cho, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel Sibley & Sajovec, P.A.

Primary Examiner:

Steven J Fulk

Assistant Examiner:

Eric Ward

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7856 (2013.01); H01L 21/823821 (2013.01); H01L 29/66795 (2013.01);
Abstract

A Field Effect Transistor (FET) structure may include a fin on a substrate having a first lattice constant and at least two different lattice constant layers on respective different axially oriented surfaces of the fin, wherein the at least two different lattice constant layers each comprise lattice constants that are different than the first lattice constant and each other.

Find Patent Forward Citations

Kang, Myung. (2015). Fin field effect transistors including multiple lattice constants and methods of fabricating the same (U.S. Patent No. 8941155). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8941155

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…