The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Aug. 16, 2013
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Akihiro Kojima, Kanagawa-ken, JP;
Takayoshi Fujii, Kanagawa-ken, JP;
Yoshiaki Sugizaki, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, and an inorganic film. The semiconductor layer includes a first surface having an unevenness, a second surface opposite to the first surface, and a light emitting layer. The semiconductor layer includes gallium nitride. The inorganic film is provided to conform to the unevenness of the first surface and in contact with the first surface. The inorganic film has main components of silicon and nitrogen. The inorganic film has a refractive index between a refractive index of the gallium nitride and a refractive index of air. An unevenness is formed also in a surface of the inorganic film.