The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Jan. 08, 2013
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Hideki Hayashi, Osaka, JP;

Takeyoshi Masuda, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 29/423 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/66666 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/0634 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 29/4236 (2013.01); H01L 29/045 (2013.01); H01L 29/0696 (2013.01);
Abstract

A first region of a silicon carbide layer constitutes a first surface, and is of a first conductivity type. A second region is provided on the first region, and is of a second conductivity type. A third region is provided on the second region, and is of the first conductivity type. A fourth region is provided in the first region, located away from each of the first surface and the second region, and is of the second conductivity type. A gate insulation film is provided on the second region so as to connect the first region with the third region. A gate electrode is provided on the gate insulation film. A first electrode is provided beneath the first region. A second electrode is provided on the third region.


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