The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Sep. 27, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Kensuke Takano, Kanagawa-ken, JP;
Yoshio Ozawa, Kanagawa-ken, JP;
Katsuyuki Sekine, Mie-ken, JP;
Junichi Wada, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 45/00 (2006.01); G11C 11/56 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/12 (2013.01); G11C 11/5685 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); H01L 45/1666 (2013.01); G11C 13/0007 (2013.01); G11C 2213/15 (2013.01); G11C 2213/32 (2013.01); G11C 2213/34 (2013.01); G11C 2213/71 (2013.01);
Abstract
A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer.