The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Dec. 07, 2009
Young-sam Park, Daejeon, KR;
Moon-gyu Jang, Daejeon, KR;
Taehyoung Zyung, Daejeon, KR;
Younghoon Hyun, Seoul, KR;
Myungsim Jun, Daejeon, KR;
Young-Sam Park, Daejeon, KR;
Moon-Gyu Jang, Daejeon, KR;
Taehyoung Zyung, Daejeon, KR;
Younghoon Hyun, Seoul, KR;
Myungsim Jun, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.