The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Aug. 22, 2012
Applicants:

Xiaodi Liu, Beijing, CN;

Jun Cheng, Beijing, CN;

Inventors:

Xiaodi Liu, Beijing, CN;

Jun Cheng, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01L 21/425 (2006.01); H01L 21/443 (2006.01); H01L 21/465 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); H01L 21/425 (2013.01); H01L 21/443 (2013.01); H01L 21/465 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/7869 (2013.01); H01L 31/022466 (2013.01);
Abstract

Embodiments of the present invention provide a method for surface treatment on a metal oxide and a method for preparing a thin film transistor. The method for surface treatment on a metal oxide comprises: utilizing plasma to perform a surface treatment on a device to be processed; the plasma comprises a mixture gas of an F-based gas and O, and the device to be processed is a metal oxide or a manufactured article coated with a metal oxide. The embodiments provided by the present invention can reduce the contact resistance between a metal oxide and other electrodes, and improve the effect of ohmic contact of the metal oxide.


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