The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Nov. 03, 2011
Applicants:
Greg Charles Baldwin, Plano, TX (US);
Kamel Benaissa, Garland, TX (US);
Sarah Liu, Plano, TX (US);
Song Zhao, Plano, TX (US);
Inventors:
Greg Charles Baldwin, Plano, TX (US);
Kamel Benaissa, Garland, TX (US);
Sarah Liu, Plano, TX (US);
Song Zhao, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01);
Abstract
A method for adding a low TCR resistor to a baseline CMOS manufacturing flow. A method of forming a low TCR resistor in a CMOS manufacturing flow. A method of forming an n-type and a p-type transistor with a low TCR resistor in a CMOS manufacturing flow.