The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Sep. 05, 2013
Applicant:
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Inventors:
Yen-Yu Huang, Taoyuan County, TW;
Hsi-Ming Chang, Taoyuan County, TW;
Assignee:
Chunghwa Picture Tubes, Ltd., Taoyuan County, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); H01L 29/66742 (2013.01);
Abstract
The present provides a method for fabricating a thin film transistor including following steps. A substrate is provided. A gate is formed above the substrate. A first source is formed above the substrate. A channel is formed, in which one end of the channel contacts with the first source. A stop layer covering the one end of the channel and exposing another end of the channel is formed. A drain connected with the other end of the channel is formed. Moreover, the present invention also provides a thin film transistor fabricated by the method.