The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Mar. 15, 2013
Applicants:

Northwestern University, Evanston, IL (US);

Polyera Corporation, Skokie, IL (US);

Inventors:

Antonio Facchetti, Chicago, IL (US);

Tobin J. Marks, Evanston, IL (US);

Mercouri G. Kanatzidis, Wilmette, IL (US);

Myung-Gil Kim, Evanston, IL (US);

William Christopher Sheets, Chicago, IL (US);

He Yan, Hong Kong, CN;

Yu Xia, Skokie, IL (US);

Assignees:

Northwestern University, Evanston, IL (US);

Polyera Corporation, Skokie, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/441 (2006.01); H01L 21/02 (2006.01); C23C 18/12 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C23C 18/1216 (2013.01); C23C 18/1225 (2013.01); C23C 18/127 (2013.01); C23C 18/1237 (2013.01); C23C 18/125 (2013.01); H01L 21/02172 (2013.01); H01L 21/441 (2013.01); H01L 29/66969 (2013.01); H01L 21/28506 (2013.01); H01L 29/66742 (2013.01); H01L 29/78693 (2013.01);
Abstract

Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.


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