The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Sep. 22, 2011
Steven S. Bui, Simi Valley, CA (US);
Jeong-sun Moon, Moorpark, CA (US);
Steven S. Bui, Simi Valley, CA (US);
Jeong-Sun Moon, Moorpark, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
The present invention provides practical methods for n-type doping of graphene, either during graphene synthesis or following the formation of graphene. Some variations provide a method of n-type doping of graphene, comprising introducing a phosphorus-containing dopant fluid to a surface of graphene, under effective conditions to dope the graphene with phosphorus atoms or with phosphorus-containing molecules or fragments. It has been found that substitutional doping with phosphine can effectively modulate the electrical properties of graphene, such as graphene supported on Si or SiC substrates. Graphene sheet resistances well below 200 ohm/sq, and sheet carrier concentrations above 5×10cm, have been observed experimentally for n-doped graphene produced by the disclosed methods. This invention provides n-doped graphene for various electronic-device applications.