The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Aug. 09, 2012
Applicants:
Byung-joo Chung, Yongin-si, KR;
Chun-gyoo Lee, Yongin-si, KR;
Inventors:
Byung-Joo Chung, Yongin-si, KR;
Chun-Gyoo Lee, Yongin-si, KR;
Assignee:
Samsung SDI Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/02 (2006.01); H01B 1/22 (2006.01); C22C 1/02 (2006.01); H01M 4/133 (2010.01); H01M 4/134 (2010.01); H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/587 (2010.01); B22F 1/02 (2006.01); C22C 19/03 (2006.01); C22C 1/10 (2006.01); C23C 24/08 (2006.01); B82Y 30/00 (2011.01); C22C 30/00 (2006.01); C22C 30/04 (2006.01); H01B 1/04 (2006.01); H01M 4/62 (2006.01); H01M 10/052 (2010.01); H01M 4/02 (2006.01); B22F 1/00 (2006.01); C22C 9/00 (2006.01);
U.S. Cl.
CPC ...
C22C 1/02 (2013.01); H01M 4/133 (2013.01); H01M 4/134 (2013.01); H01M 4/364 (2013.01); H01M 4/366 (2013.01); H01M 4/38 (2013.01); H01M 4/386 (2013.01); H01M 4/587 (2013.01); B22F 1/02 (2013.01); C22C 19/03 (2013.01); C22C 1/1036 (2013.01); C23C 24/08 (2013.01); B82Y 30/00 (2013.01); C22C 30/00 (2013.01); C22C 30/04 (2013.01); H01B 1/02 (2013.01); H01B 1/04 (2013.01); H01M 4/622 (2013.01); H01M 4/625 (2013.01); H01M 10/052 (2013.01); H01M 2004/021 (2013.01); Y02E 60/122 (2013.01); B22F 1/004 (2013.01); C22C 9/00 (2013.01);
Abstract
A silicon-based shape memory alloy negative active material includes a silicon-based material precipitated on a NiMnZshape memory alloy basic material. In the silicon-based shape memory alloy negative active material, X satisfies the relationship 0≦X≦1 and Z is one of Al, Ga, In, Sn, or Sb.