The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Mar. 18, 2009
Applicants:

Seung Jin Lee, Kyunggi-do, KR;

Hee Soo Yeo, Ulsan, KR;

Inventors:

Seung Jin Lee, Kyunggi-do, KR;

Hee Soo Yeo, Ulsan, KR;

Assignee:

E I du Pont de Nemours and Company, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/306 (2006.01); C09K 13/08 (2006.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0236 (2013.01); Y02E 10/50 (2013.01);
Abstract

A method of texturizing a silicon substrate comprising a) contacting the substrate with an etching solution comprising glycolic acid, b) etching a surface of the substrate thereby forming disruptions in said surface of the substrate, and c) removing the etching solution to yield a texturized substrate, said texturized substrate having a plurality of disruptions in at least one surface with a surface density of disruptions of a minimum of 60 disruptions in a 400 micron square area.


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Lee, Seung. (2015). Textured silicon substrate and method (U.S. Patent No. 8940178). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8940178

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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