The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Nov. 04, 2011
Applicant:
Partha Dutta, Clifton Park, NY (US);
Inventor:
Partha Dutta, Clifton Park, NY (US);
Assignee:
Rensselaer Polytechnic Institute, Troy, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 9/06 (2006.01); C30B 11/06 (2006.01); C30B 29/40 (2006.01); C30B 29/48 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C30B 11/06 (2013.01); C30B 29/40 (2013.01); C30B 29/403 (2013.01); C30B 29/48 (2013.01); C30B 35/00 (2013.01);
Abstract
An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cmand a radial compositional variation of less than 1%.