The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Feb. 19, 2013
Applicant:

Sanyo Electric Co., Ltd., Moriguchi, JP;

Inventors:

Yasuyuki Yanase, Hashima, JP;

Koichi Saito, Ogaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 31/02 (2006.01); B32B 7/04 (2006.01); H01L 23/00 (2006.01); B23K 20/02 (2006.01); B32B 15/01 (2006.01);
U.S. Cl.
CPC ...
B32B 7/04 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); B23K 20/02 (2013.01); B32B 15/01 (2013.01); B23K 20/021 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/8183 (2013.01); H01L 2224/83191 (2013.01); H01L 224/9211 (2013.01); H01L 2924/01029 (2013.01); H01L 2224/11825 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1148 (2013.01); H01L 2224/11903 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/11831 (2013.01); H01L 2224/1184 (2013.01); B23K 2203/12 (2013.01); H01L 2924/00013 (2013.01);
Abstract

After a microcrystalline layer having a grain size that is finer than that of a base member is formed on the surface of at least one of a first bonding portion and a second bonding portion, the gap between the first bonding portion and the second bonding portion is filled with a solution into which copper oxide can be eluted, so as to deposit copper oxide contained in the surface oxide film into the solution. By applying pressure and by heating at a temperature of at most the copper recrystallization temperature, the components contained in the solution are removed except for copper, so as to elute copper oxide, thereby bonding the first bonding portion and the second bonding portion via the copper thus deposited. Subsequently, the copper is solid-phase diffused into the first bonding portion and the second bonding portion.


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