The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2015

Filed:

Mar. 26, 2012
Applicants:

In-sang Song, Seoul, KR;

Sang-sub Song, Suwon-si, KR;

Inventors:

In-Sang Song, Seoul, KR;

Sang-Sub Song, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 23/49822 (2013.01); H01L 23/3128 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06517 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/014 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/1435 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15312 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06568 (2013.01); H01L 2924/01029 (2013.01); H01L 2224/16145 (2013.01); H01L 2924/3025 (2013.01);
Abstract

The present disclosure provides a memory device and a fabricating method thereof. The memory device includes a substrate including a first metal layer formed therein, the first metal layer having at least a first surface with at least a first exposed portion of the first surface exposed at a lateral surface of the substrate, at least a first semiconductor chip formed on a top surface of the substrate, and a second metal layer surrounding the first semiconductor chip and extending to lateral surfaces of the substrate, at least a first portion of the second metal layer contacting the exposed surface of the first metal layer.


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