The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
May. 22, 2012
Applicants:
Yun-mo Chung, Yongin-si, KR;
Ki-yong Lee, Cheonan-si, KR;
Jin-wook Seo, Seoul, KR;
Jong-ryuk Park, Yongin, KR;
Inventors:
Yun-Mo Chung, Yongin-si, KR;
Ki-Yong Lee, Cheonan-si, KR;
Jin-Wook Seo, Seoul, KR;
Jong-Ryuk Park, Yongin, KR;
Assignee:
Samsung Display Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/20 (2006.01); B82Y 99/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device and a method of manufacturing the same are disclosed. In one embodiment, the semiconductor device includes a substrate, a first silicon nitride layer formed over the substrate, a first silicon oxide layer formed directly on the first silicon nitride layer and having a thickness of about 1000 Å or less, and a hydrogenated polycrystalline silicon layer formed directly on the first silicon oxide layer.