The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Sep. 09, 2013
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Chin-Hai Huang, Taoyuan County, TW;
Bo-Jhang Sun, Kaohsiung, TW;
Szu-Chi Huang, Changhua County, TW;
Chunghwa Picture Tubes, Ltd., Longtan Township, Taoyuan County, TW;
Abstract
An oxide semiconductor thin film transistor includes a substrate, a gate electrode, an oxide semiconductor layer, a gate insulation layer, an oxide source electrode, an oxide drain electrode and a metal connection component. The gate insulation layer is at least partially disposed between the gate electrode and the oxide semiconductor layer. The oxide source electrode and the oxide drain electrode are respectively disposed at least partially between the oxide semiconductor layer and the substrate. The metal connection component is disposed on the substrate, and the metal connection component overlaps the oxide source electrode in a vertical projective direction perpendicular to the substrate. The metal connection component does not overlap the oxide semiconductor layer in the vertical projective direction. Any portion of the metal connection component located in a region where the oxide source electrode overlaps the metal connection component directly contacts the oxide source electrode for forming electrical connection.