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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8937020 B1

PDFFull Text
Date of Patent:
Jan. 20, 2015

Filed:

Jun. 20, 2013

Sputtering target and manufacturing method thereof, and transistor

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Toru Takayama, Kanagawa, JP;

Keiji Sato, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

David Nhu

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); C04B 41/00 (2006.01); H01L 29/786 (2006.01); C04B 35/453 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); C04B 35/01 (2006.01); C23C 14/56 (2006.01); C04B 35/645 (2006.01); C23C 14/10 (2006.01); B29C 31/00 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); C04B 41/80 (2006.01); H01L 29/45 (2006.01); C04B 111/00 (2006.01);
U.S. Cl.
CPC ...
B29C 31/008 (2013.01); C04B 2111/00844 (2013.01); C04B 41/009 (2013.01); H01L 29/7869 (2013.01); C04B 35/453 (2013.01); C23C 14/3414 (2013.01); H01L 21/02422 (2013.01); H01L 21/02631 (2013.01); C04B 41/0072 (2013.01); C04B 2235/77 (2013.01); H01L 29/42384 (2013.01); C04B 2235/658 (2013.01); H01L 29/78618 (2013.01); C04B 2235/666 (2013.01); C04B 2235/3284 (2013.01); C04B 35/01 (2013.01); C23C 14/564 (2013.01); C04B 35/6455 (2013.01); C04B 2235/3286 (2013.01); H01L 21/02488 (2013.01); C04B 2235/3418 (2013.01); H01L 21/0242 (2013.01); C23C 14/10 (2013.01); C04B 2235/662 (2013.01); H01L 29/41733 (2013.01); C04B 35/645 (2013.01); H01L 21/02554 (2013.01); H01L 29/66742 (2013.01); C04B 41/80 (2013.01); H01L 21/02565 (2013.01); H01L 29/45 (2013.01);
Abstract

One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×10atoms/cm, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by HO or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

Find Patent Forward Citations

Yamazaki, Shunpei. (2015). Sputtering target and manufacturing method thereof, and transistor (U.S. Patent No. 8937020). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8937020

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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