The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2015

Filed:

Oct. 12, 2007
Applicant:

Masafumi Morisue, Kawasaki, JP;

Inventor:

Masafumi Morisue, Kawasaki, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0012 (2013.01); H01L 51/0529 (2013.01); H01L 51/0005 (2013.01);
Abstract

A method for easily forming a region with conductivity and high wettability without a step for removing a photocatalytic reaction layer, which is formed over a conductive layer, is proposed. The photocatalytic reaction layer is formed over a photocatalytic conductive layer, and the photocatalytic conductive layer is irradiated with ultraviolet light to form a region with conductivity and higher wettability than the photocatalytic reaction layer on a surface of the photocatalytic conductive layer which is irradiated with ultraviolet light. Note that for the photocatalytic conductive layer, a layer having a photocatalytic property of which resistivity is lower than or equal to 1×10Ω cm can be used.


Find Patent Forward Citations

Loading…