The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Dec. 22, 2010
Claire Fenouillet-béranger, Saint Martin d'Hères, FR;
Stéphane Denorme, Crolles, FR;
Philippe Coronel, Barraux, FR;
Claire Fenouillet-Béranger, Saint Martin d'Hères, FR;
Stéphane Denorme, Crolles, FR;
Philippe Coronel, Barraux, FR;
Commissariat a l'Energie Atomique et aux Energies Alternatives, Paris, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
A hybrid substrate comprises first and second active areas made from semiconductor materials laterally offset from one another and separated by an isolation area. The main surfaces of the isolation area and of the first active area form a plane. The hybrid substrate is obtained from a source substrate successively comprising layers made from a first and second semiconductor materials separated by an isolation layer. A single etching mask is used to pattern the isolation area, first active area and second active area. The main surface of the first active area is released thereby forming voids in the source substrate. The etching mask is eliminated above the first active area. A first isolation material is deposited, planarized and etched until the main surface of the first active area is released.