The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Mar. 04, 2013
Volterra Semiconductor Corporation, Fremont, CA (US);
Marco A. Zuniga, Palo Alto, CA (US);
Budong You, Fremont, CA (US);
Volterra Semiconductor LLC, San Jose, CA (US);
Abstract
Method and apparatus for providing a lateral double-diffused MOSFET (LDMOS) transistor having a dual gate. The dual gate includes a first gate and a second gate. The first gate includes a first oxide layer formed over a substrate, and the second gate includes a second oxide layer formed over the substrate. The first gate is located a pre-determined distance from the second gate. A digitally implemented voltage regulator is also provided that includes a switching circuit having a dual gate LDMOS transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile