The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Feb. 25, 2013
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
In Gyoo Kim, Daejeon, KR;
Gyungock Kim, Daejeon, KR;
Sang Hoon Kim, Daejeon, KR;
Ki Seok Jang, Daejeon, KR;
JiHo Joo, Goyang-si, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01S 5/30 (2006.01); H01S 5/026 (2006.01); H01S 5/32 (2006.01); G02B 6/12 (2006.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3031 (2013.01); H01S 5/026 (2013.01); H01S 5/3223 (2013.01); G02B 6/12004 (2013.01); H01S 5/021 (2013.01); H01S 5/0425 (2013.01); Y10S 438/933 (2013.01);
Abstract
Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.