The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Mar. 14, 2011
Naoki Nakajo, Kiyosu, JP;
Masao Kamiya, Kiyosu, JP;
Akihiro Honma, Kiyosu, JP;
Toyoda Gosei Co., Ltd., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
To improve light emission efficiency and reliability. A transparent conductive filmis formed on an entire top surface of a second semiconductor layer, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming partof a first semiconductor layer, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.