The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2015

Filed:

Aug. 26, 2009
Applicant:

Shoichi Karakida, Tokyo, JP;

Inventor:

Shoichi Karakida, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Chiyoda-Ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022433 (2013.01); H01L 31/068 (2013.01); G01R 31/2605 (2013.01); Y02E 10/547 (2013.01);
Abstract

A manufacturing method of a solar cell in which a light receiving side electrode including grid electrodes is provided on one side of a semiconductor substrate, comprises: a first step of forming an impurity diffusion layer on one side of the semiconductor substrate of a first conductivity type, the diffusion layer having a second conductivity-type impurity diffused therein; a second step of measuring a sheet resistance value of the diffusion layer at a plurality of measurement points in a surface of the diffusion layer; and a third step of dividing the surface of the diffusion layer into a plurality of areas corresponding to the measured sheet resistance values of the surface of the diffusion layer, setting a distance between adjacent grid electrodes for each of the areas, and forming the light receiving side electrode, which is electrically connected to the diffusion layer, on the diffusion layer.


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