The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8936948 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 20, 2015

Filed:

Jul. 26, 2012
Applicant:

Osamu Fujita, Tokyo, JP;

Inventor:

Osamu Fujita, Tokyo, JP;

Assignee:

PS4 Luxco S.A.R.L., Luxembourg, LU;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 27/108 (2006.01); H01L 21/66 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 27/10876 (2013.01); H01L 22/26 (2013.01); H01L 21/76224 (2013.01);
Abstract

A hard mask, a protective film, which protects the hard mask film from oxidation, a first mask film and a first organic film are sequentially stacked. The first organic film is processed into a first pattern, and the first mask film is etched using the patterned first organic film as a mask. After the first organic film is removed, a second organic film is formed. The second organic film is processed into a second pattern. The first mask film is secondary etched using the patterned second organic film as a mask so that the surface of the first mask film is exposed but the surface of the protective film is not exposed, thereby selectively patterning only the first mask film. After that, when removing the residual second organic film by ashing, it is possible to ensure the function of the protective film that protects the hard mask film from oxidation.


Find Patent Forward Citations

Fujita, Osamu. (2015). Method of fabricating semiconductor device (U.S. Patent No. 8936948). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8936948

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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