The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Jan. 20, 2011
Applicant:
Yukio Shakuda, Kyoto, JP;
Inventor:
Yukio Shakuda, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto-Shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/323 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01S 5/223 (2006.01); H01S 5/32 (2006.01); H01L 33/12 (2010.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/32341 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01S 5/2231 (2013.01); H01S 5/32 (2013.01); H01L 33/12 (2013.01); H01S 5/0213 (2013.01); H01S 5/0421 (2013.01); H01S 5/0422 (2013.01); H01S 5/2004 (2013.01); H01S 5/2009 (2013.01); H01S 5/22 (2013.01); H01S 5/3211 (2013.01); H01S 5/3213 (2013.01); H01S 2301/173 (2013.01); H01S 2304/04 (2013.01);
Abstract
A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.