The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

Sep. 05, 2012
Applicants:

Hak-soo Yu, Seongnam-si, KR;

Uk-song Kang, Seongnam-si, KR;

Chul-woo Park, Yongin-si, KR;

Joo-sun Choi, Yongin-si, KR;

Hong-sun Hwang, Suwon-si, KR;

Inventors:

Hak-soo Yu, Seongnam-si, KR;

Uk-song Kang, Seongnam-si, KR;

Chul-woo Park, Yongin-si, KR;

Joo-sun Choi, Yongin-si, KR;

Hong-Sun Hwang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/44 (2006.01); G11C 29/50 (2006.01); G11C 29/00 (2006.01); G11C 29/04 (2006.01); G11C 11/41 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50 (2013.01); G11C 2029/0409 (2013.01); G11C 29/783 (2013.01); G11C 2029/4402 (2013.01); G11C 11/41 (2013.01);
Abstract

A semiconductor device includes a first memory region including a plurality of memory cells; a test unit configured to test the first memory region, and detect a weak bit from among the plurality of memory cells; and a second memory region configured to store a weak bit address (WBA) of the first memory region, and data intended to be stored in the weak bit, wherein the first memory region and the second memory region include different types of memory cells.


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