The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

Feb. 18, 2014
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Myoung Sub Kim, Gyeonggi-do, KR;

Soo Gil Kim, Gyeonggi-do, KR;

Nam Kyun Park, Gyeonggi-do, KR;

Sung Cheoul Kim, Gyeonggi-do, KR;

Gap Sok Do, Gyeonggi-do, KR;

Joon Seop Sim, Gyeonggi-do, KR;

Hyun Jeong Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); G11C 13/0004 (2013.01); H01L 27/2409 (2013.01); H01L 27/249 (2013.01); H01L 45/06 (2013.01); H01L 45/1226 (2013.01); H01L 45/1246 (2013.01); H01L 45/126 (2013.01); H01L 45/144 (2013.01); G11C 2013/008 (2013.01); G11C 2213/71 (2013.01);
Abstract

A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.


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