The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

Jul. 19, 2012
Applicants:

Masaharu Matsudaira, Kanagawa, JP;

Masayuki Terai, Kanagawa, JP;

Inventors:

Masaharu Matsudaira, Kanagawa, JP;

Masayuki Terai, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/108 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 49/02 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10852 (2013.01); H01L 27/10894 (2013.01); H01L 45/04 (2013.01); H01L 45/146 (2013.01); H01L 45/1683 (2013.01); H01L 27/2436 (2013.01); H01L 28/91 (2013.01); H01L 27/1052 (2013.01);
Abstract

In a case where a DRAM and a ReRAM are mounted together, a manufacturing cost thereof is reduced while maintaining performance of a capacitance element and a variable resistance element. A semiconductor memory device includes a variable resistance element and a capacitance element. The variable resistance element has a cylinder type MIM structure with a first depth, and is designed for a variable resistance type memory. The capacitance element has a cylinder type MIM structure with a second depth deeper than the first depth, and is designed for a DRAM.


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