The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
May. 29, 2012
Jianhui Wu, Nanjing, CN;
Xiao Shi, Nanjing, CN;
Chao Chen, Nanjing, CN;
Zhilin Liu, Nanjing, CN;
Qiang Zhao, Nanjing, CN;
Junfeng Wen, Nanjing, CN;
Xudong Wang, Nanjing, CN;
Chunfeng Bai, Nanjing, CN;
Qian Tian, Nanjing, CN;
Jianhui Wu, Nanjing, CN;
Xiao Shi, Nanjing, CN;
Chao Chen, Nanjing, CN;
Zhilin Liu, Nanjing, CN;
Qiang Zhao, Nanjing, CN;
Junfeng Wen, Nanjing, CN;
Xudong Wang, Nanjing, CN;
Chunfeng Bai, Nanjing, CN;
Qian Tian, Nanjing, CN;
Southeast University, Nanjing, CN;
Abstract
A transconductance-enhancing passive frequency mixer comprises a transconductance amplification stage, a frequency mixing stage, and an output transresistance amplifier. The transconductance amplification stage has a pre-amplification transconductance-enhancing structure, so that the transconductance is greatly enhanced, thereby obtaining the same transconductance value at a lower bias current. A radio-frequency current is modulated by the frequency mixing stage to generate an output mid-frequency current signal. The mid-frequency current signal passes through the transresistance amplifier, to form voltage output, and finally obtain a mid-frequency voltage signal. The transresistance amplifier has a transconductance-enhancing structure, thereby further reducing input impedance, and improving current utilization efficiency and port isolation. The frequency mixer has the characteristics of low power consumption, high conversion gain, good port isolation, and the like.