The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

May. 23, 2006
Applicants:

Shin Kawami, Tsurugashima, JP;

Taishi Tsuji, Tsurugashima, JP;

Hideki Sato, Yokohama, JP;

Masayoshi Yabe, Yokohama, JP;

Inventors:

Shin Kawami, Tsurugashima, JP;

Taishi Tsuji, Tsurugashima, JP;

Hideki Sato, Yokohama, JP;

Masayoshi Yabe, Yokohama, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/54 (2006.01); H01L 51/50 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5016 (2013.01); H01L 51/0072 (2013.01); H01L 51/5004 (2013.01); H01L 51/5048 (2013.01); H01L 51/005 (2013.01); H01L 51/008 (2013.01); H01L 51/0081 (2013.01); H01L 51/0085 (2013.01); H01L 51/5088 (2013.01); H01L 2251/558 (2013.01);
Abstract

Disclosed is an organic electroluminescent device having a longer drive life. Specifically disclosed is an organic electroluminescent device () comprising an organic material layer (), which is composed of a hole transporting layer (), a light-emitting layer () and an electron transporting layer (), between a pair of electrodes, namely a cathode () and an anode (). The light-emitting layer () (having a film thickness (dM) of 5-3000 nm) contains a luminescent dye and a host material. The first oxidation potential (ED+) of the luminescent dye is lower than the first oxidation potential (EH+) of the host material, while the first reduction potential (ED−) of the luminescent dye is lower than the first reduction potential (EH−) of the host material. The film thickness (dE: 5-3000 nm) of the electron transporting layer () and the film thickness (dH: 5-3000 nm) of the hole transporting layer () satisfy the following relation: dH≦dE.


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