The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Jul. 12, 2012
Duli Mao, Sunnyvale, CA (US);
Hsin-chih Tai, San Jose, CA (US);
Yin Qian, Milpitas, CA (US);
Tiejun Dai, Santa Clara, CA (US);
Howard E. Rhodes, San Martin, CA (US);
Hongli Yang, Saratoga, CA (US);
Duli Mao, Sunnyvale, CA (US);
Hsin-Chih Tai, San Jose, CA (US);
Yin Qian, Milpitas, CA (US);
Tiejun Dai, Santa Clara, CA (US);
Howard E. Rhodes, San Martin, CA (US);
Hongli Yang, Saratoga, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
An integrated circuit system includes a first device wafer having a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer having a second semiconductor layer proximate to a second metal layer including a second conductor is disposed within a second metal layer oxide. A frontside of the first device wafer is bonded to a frontside of the second device wafer at a bonding interface. A conductive path couples the first conductor to the second conductor through the bonding interface. A first metal EMI shield is disposed in one of the first metal oxide layer and second metal layer oxide layer. The first EMI shield is included in a metal layer of said one of the first metal oxide layer and the second metal layer oxide layer nearest to the bonding interface.