The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Mar. 15, 2011
Toshiya Yokogawa, Nara, JP;
Mitsuaki Oya, Osaka, JP;
Atsushi Yamada, Osaka, JP;
Akihiro Isozaki, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Mitsuaki Oya, Osaka, JP;
Atsushi Yamada, Osaka, JP;
Akihiro Isozaki, Osaka, JP;
Abstract
A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structurewhich includes a p-type semiconductor region with a surfacebeing inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrodeprovided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlInGaN (where x+y+z=1, x≧0, y≧0, and z≧0) layer. The electrodeincludes a Mg layerand an Ag layerprovided on the Mg layer. The Mg layeris in contact with the surfaceof the p-type semiconductor region of the semiconductor multilayer structure