The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Jun. 30, 2009
Shinjiro Kato, Chiba, JP;
Jun Osanai, Chiba, JP;
Shinjiro Kato, Chiba, JP;
Jun Osanai, Chiba, JP;
Seiko Instruments Inc., , JP;
Abstract
A semiconductor device has a semiconductor substrate with a semiconductor layer, a first element region formed on the semiconductor layer and on which are formed first semiconductor elements sensitive to stress, and a second element region formed on the semiconductor layer and on which are formed second semiconductor elements less sensitive to stress than the first semiconductor elements. The first and second element regions are formed in the semiconductor layer at preselected depths from a surface of the semiconductor layer. A buffer region for suppressing stress generated in the first element region is formed of a trench filled with a filler material and extending into the semiconductor layer so that a depth of the trench from the surface of the semiconductor layer is greater than the preselected depths, and so that a portion of the semiconductor layer exists under the filled trench of the buffer region.