The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Aug. 14, 2012
Longxing Shi, Jiangsu, CN;
Qinsong Qian, Jiangsu, CN;
Weifeng Sun, Jiangsu, CN;
Jing Zhu, Jiangsu, CN;
Xianguo Huang, Jiangsu, CN;
Shengli LU, Jiangsu, CN;
Longxing Shi, Jiangsu, CN;
Qinsong Qian, Jiangsu, CN;
Weifeng Sun, Jiangsu, CN;
Jing Zhu, Jiangsu, CN;
Xianguo Huang, Jiangsu, CN;
Shengli Lu, Jiangsu, CN;
Southeast University, , CN;
Abstract
An isolation structure of a high-voltage driving circuit includes a P-type substrate and a P-type epitaxial layer; a high voltage area, a low voltage area and a high and low voltage junction terminal area are arranged on the P-type epitaxial layer; a first P-type junction isolation area is arranged between the high and low voltage junction terminal area and the low voltage area, and a high-voltage insulated gate field effect tube is arranged between the high voltage area and the low voltage area; two sides of the high-voltage insulated gate field effect tube and an isolation structure between the high-voltage insulated gate field effect tube and a high side area are formed as a second P-type junction isolation area.