The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

Apr. 06, 2012
Applicants:

James G. Deak, Zhangjiagang, CN;

Insik Jin, Zhangjiagang, CN;

Weifeng Shen, Zhangjiagang, CN;

Songsheng Xue, Zhangjiagang, CN;

Xiaofeng Lei, Zhangjiagang, CN;

Inventors:

James G. Deak, Zhangjiagang, CN;

Insik Jin, Zhangjiagang, CN;

Weifeng Shen, Zhangjiagang, CN;

Songsheng Xue, Zhangjiagang, CN;

Xiaofeng Lei, Zhangjiagang, CN;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); G01R 33/09 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G01R 33/098 (2013.01);
Abstract

The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.


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