The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

May. 20, 2013
Applicants:

Sunghoi Hur, Seoul, KR;

Jinho Kim, Hwaseong-si, KR;

Sunil Shim, Seoul, KR;

Su-youn Yi, Yongin-si, KR;

Huichang Moon, Yongin-si, KR;

Inventors:

Younggoan Jang, Anyang-si, KR;

Sunghoi Hur, Seoul, KR;

Jinho Kim, Hwaseong-si, KR;

Sunil Shim, Seoul, KR;

Su-Youn Yi, Yongin-si, KR;

HuiChang Moon, Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01);
Abstract

A three-dimensional semiconductor memory device includes word lines and gate interlayer insulation layers that are alternatively stacked on a semiconductor substrate while extending in a horizontal direction, a vertical channel layer that faces the word lines and extends upwardly from the semiconductor substrate, and a channel pad that extends from the vertical channel layer and is disposed on an uppermost gate interlayer insulation layer of the gate interlayer insulation layers.


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