The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Nov. 07, 2013
Applicants:
Hidefumi Takaya, Miyoshi, JP;
Kimimori Hamada, Toyota, JP;
Yuji Nishibe, Owariasahi, JP;
Inventors:
Assignee:
Toyota Jidosha Kabushiki Kaisha, Toyota-Shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7815 (2013.01); H01L 29/0873 (2013.01); H01L 29/0878 (2013.01); H01L 29/0886 (2013.01); H01L 29/1095 (2013.01); H01L 29/0653 (2013.01);
Abstract
Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value: