The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Mar. 13, 2013
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Woo-chul Jeon, Daegu, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A HEMT according to example embodiments may include a first semiconductor layer, a second semiconductor layer configured to induce a 2-dimensional electron gas (2DEG) in the second semiconductor layer, an insulating mask layer on the second semiconductor layer, a depletion forming layer on one of a portion of the first semiconductor layer and a portion of the second semiconductor layer that is exposed by an opening defined by the insulating mask layer, a gate on the depletion forming layer, and a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer. The source and drain may be spaced apart from the gate. The depleting forming layer may be configured to form a depletion region in the 2DEG.