The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Aug. 24, 2009
Toshiaki Sasaki, Otsu, JP;
Naoki Kadota, Otsu, JP;
Toshiaki Sasaki, Otsu, JP;
Naoki Kadota, Otsu, JP;
Kaneka Corporation, Osaka-shi, JP;
Abstract
A conventional thin-film photoelectric converter using amorphous germanium or crystalline silicon as a photoelectric conversion layer is problematic in that light having a long wavelength of 1100 nm or more cannot be used for photoelectric conversion, and is inefficient. The problem is solved by a thin-film photoelectric converter including one or more photoelectric conversion units each having a photoelectric conversion layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer, wherein the photoelectric conversion layer of at least one photoelectric conversion unit includes an intrinsic or weak n-type crystalline germanium semiconductor, and the absorption coefficient of infrared-absorption peak at wave number of 935±5 cmof the crystalline germanium semiconductor is less than 6000 cm. The problem is also solved by a thin-film photoelectric converter having acrystalline germanium semiconductor whose absorption coefficient of infrared-absorption peak at wave number of 960±5 cmis less than 3500 cm.