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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8932964 B1

PDFFull Text
Date of Patent:
Jan. 13, 2015

Filed:

Apr. 11, 2012

Method of forming a dielectric layer having an ono structure using an in-situ process

Applicants:

Woo-jin Lee, Hwaseong-si, KR;

Ji-soon Park, Suwon-si, KR;

Jong-myeong Lee, Seongnam-si, KR;

Hyun-bae Lee, Seoul, KR;

Inventors:

Woo-Jin Lee, Hwaseong-si, KR;

Ji-Soon Park, Suwon-si, KR;

Jong-Myeong Lee, Seongnam-si, KR;

Hyun-Bae Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Ajay K Arora

Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/28202 (2013.01); H01L 21/0217 (2013.01); H01L 21/022 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02359 (2013.01); H01L 29/513 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01);
Abstract

A method of forming a dielectric layer, the method including sequentially forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate by performing a plasma-enhanced atomic layer deposition process, wherein a first nitrogen plasma treatment is performed after forming the first oxide layer.

Find Patent Forward Citations

Lee, Woo-Jin. (2015). Method of forming a dielectric layer having an ono structure using an in-situ process (U.S. Patent No. 8932964). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8932964

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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