The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Jun. 28, 2012
Wang Zhang, Guangdong, CN;
Xilin Su, Guangdong, CN;
Chunlin Xie, Guangdong, CN;
Hongpo HU, Guangdong, CN;
Wang Zhang, Guangdong, CN;
Xilin Su, Guangdong, CN;
Chunlin Xie, Guangdong, CN;
Hongpo Hu, Guangdong, CN;
Shenzhen BYD Auto R&D Company Limited, Shenzhen, Guangdong, CN;
BYD Company Limited, Shenzhen, Guangdong, CN;
Abstract
A method for manufacturing an epitaxial wafer for a light emitting diode (LED) is provided. The method may comprise: forming a back coating layer on a back surface of a substrate; forming a buffer layer on a top surface of the substrate; forming an N-type semiconductor layer on the buffer layer; forming a multi-quantum well layer on the N-type semiconductor layer; and forming a P-type semiconductor layer on the multi-quantum well layer. An epitaxial wafer and a method for manufacturing an LED chip are also provided.