The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

Aug. 26, 2011
Applicants:

Chen-yang Huang, Hsinchu County, TW;

Chia-hsin Chao, Taichung, TW;

Wen-yung Yeh, Hsinchu County, TW;

Inventors:

Chen-Yang Huang, Hsinchu County, TW;

Chia-Hsin Chao, Taichung, TW;

Wen-Yung Yeh, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 21/28 (2006.01); H01L 33/10 (2010.01); H01L 33/08 (2010.01); H01L 27/15 (2006.01); G03B 21/20 (2006.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); G03B 21/2033 (2013.01); H01L 33/0079 (2013.01); H01L 33/405 (2013.01); H01L 33/46 (2013.01);
Abstract

A light emitting unit array including a plurality of micro-light emitting diodes (μ-LEDs) is provided. The micro-light emitting diodes are arranged in an array on a substrate, and each of the micro-light emitting diodes includes a reflection layer, a light emitting structure, and a light collimation structure. The light emitting structure is disposed on the reflection layer, and includes a first type doped semiconductor layer, an active layer, and a second type doped semiconductor layer that are stacked sequentially. At least a portion of the first type doped semiconductor layer, the active layer, and the second type doped semiconductor layer are sandwiched between the reflection layer and the light collimation structure.


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