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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8929416 B1

PDFFull Text
Date of Patent:
Jan. 06, 2015

Filed:

Aug. 28, 2013

Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser device

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Shimpei Takagi, Osaka, JP;

Yusuke Yoshizumi, Itami, JP;

Koji Katayama, Osaka, JP;

Masaki Ueno, Itami, JP;

Takatoshi Ikegami, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Tamatane J. Aga

Primary Examiner:

Colleen A Matthews

Assistant Examiner:

Marcia Golub-Miller

Int. Cl.
CPC ...
H01S 5/32 (2006.01); H01S 5/10 (2006.01); B82Y 20/00 (2011.01); H01S 5/02 (2006.01); H01S 5/343 (2006.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); H01S 5/22 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1085 (2013.01); B82Y 20/00 (2013.01); H01S 5/0202 (2013.01); H01S 5/34333 (2013.01); H01L 33/0045 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01S 5/0208 (2013.01); H01S 5/2201 (2013.01); H01S 5/3202 (2013.01); H01S 5/3404 (2013.01);
Abstract

A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and having a semipolar primary surface, and the semiconductor region being provided on the semipolar primary surface of the support base; and an electrode provided on the semiconductor region of the laser structure, the semiconductor region including a first cladding layer, a second cladding layer, and an active layer.

Find Patent Forward Citations

Takagi, Shimpei. (2015). Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser device (U.S. Patent No. 8929416). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8929416

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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